Carrier dynamics in GaAs–Al0.46Ga0.54As superlattice structure grown by molecular beam epitaxy
Identifieur interne : 000A54 ( Main/Exploration ); précédent : 000A53; suivant : 000A55Carrier dynamics in GaAs–Al0.46Ga0.54As superlattice structure grown by molecular beam epitaxy
Auteurs : S. Kra Em [Tunisie] ; F. Hassen [Tunisie] ; H. Maaref [Tunisie] ; X. Marie [France] ; E. Vanelle [France]Source :
- Optical Materials [ 0925-3467 ] ; 2001.
Abstract
Molecular beam epitaxy (MBE) grown GaAs–Al0.46Ga0.54As superlattice (SL) structures containing one thicker single quantum well (SQW) are investigated with use of time-integrated and time-resolved photoluminescence in the temperature range 10–300 K. Analysing the temperature dependence of the integrated PL intensity, we observe thermally activated carrier transfer from the SL to the SQW, for temperature higher than 70 K. Both radiative and nonradiative recombination times have been extracted from the combined measurements of the PL decay time and the PL-integrated intensity. The nonradiative processes in the SL have been found to play an important role and become dominant for T⩾70 K. Due to the carrier transfer from the SL to the SQW, the radiative time in the SQW dominates the recombination up to 220 K. We believe this heterostructure for the development of quantum-well lasers operating at room temperature to be applicable.
Url:
DOI: 10.1016/S0925-3467(01)00096-9
Affiliations:
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Kra Em</name><affiliation wicri:level="1"><country xml:lang="fr">Tunisie</country><wicri:regionArea>Laboratoire de Physique des Semiconducteurs et des Composants Electroniques, Département de Physique, Faculté des Sciences de Monastir, Monastir 5000</wicri:regionArea><wicri:noRegion>Monastir 5000</wicri:noRegion></affiliation></author><author><name sortKey="Hassen, F" sort="Hassen, F" uniqKey="Hassen F" first="F." last="Hassen">F. Hassen</name><affiliation wicri:level="1"><country xml:lang="fr">Tunisie</country><wicri:regionArea>Laboratoire de Physique des Semiconducteurs et des Composants Electroniques, Département de Physique, Faculté des Sciences de Monastir, Monastir 5000</wicri:regionArea><wicri:noRegion>Monastir 5000</wicri:noRegion></affiliation><affiliation wicri:level="1"><country wicri:rule="url">Tunisie</country></affiliation></author><author><name sortKey="Maaref, H" sort="Maaref, H" uniqKey="Maaref H" first="H." last="Maaref">H. Maaref</name><affiliation wicri:level="1"><country xml:lang="fr">Tunisie</country><wicri:regionArea>Laboratoire de Physique des Semiconducteurs et des Composants Electroniques, Département de Physique, Faculté des Sciences de Monastir, Monastir 5000</wicri:regionArea><wicri:noRegion>Monastir 5000</wicri:noRegion></affiliation><affiliation></affiliation><affiliation wicri:level="1"><country wicri:rule="url">Tunisie</country></affiliation></author><author><name sortKey="Marie, X" sort="Marie, X" uniqKey="Marie X" first="X." last="Marie">X. Marie</name><affiliation wicri:level="3"><country xml:lang="fr">France</country><wicri:regionArea>Département de Génie Physique, INSA, Avenue de Rangueil, Toulouse 31077</wicri:regionArea><placeName><region type="region" nuts="2">Occitanie (région administrative)</region><region type="old region" nuts="2">Midi-Pyrénées</region></placeName></affiliation></author><author><name sortKey="Vanelle, E" sort="Vanelle, E" uniqKey="Vanelle E" first="E." last="Vanelle">E. 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Analysing the temperature dependence of the integrated PL intensity, we observe thermally activated carrier transfer from the SL to the SQW, for temperature higher than 70 K. Both radiative and nonradiative recombination times have been extracted from the combined measurements of the PL decay time and the PL-integrated intensity. The nonradiative processes in the SL have been found to play an important role and become dominant for T⩾70 K. Due to the carrier transfer from the SL to the SQW, the radiative time in the SQW dominates the recombination up to 220 K. We believe this heterostructure for the development of quantum-well lasers operating at room temperature to be applicable.</div></front></TEI><affiliations><list><country><li>France</li><li>Tunisie</li></country><region><li>Midi-Pyrénées</li><li>Occitanie (région administrative)</li></region></list><tree><country name="Tunisie"><noRegion><name sortKey="Kra Em, S" sort="Kra Em, S" uniqKey="Kra Em S" first="S." last="Kra Em">S. Kra Em</name></noRegion><name sortKey="Hassen, F" sort="Hassen, F" uniqKey="Hassen F" first="F." last="Hassen">F. Hassen</name><name sortKey="Hassen, F" sort="Hassen, F" uniqKey="Hassen F" first="F." last="Hassen">F. Hassen</name><name sortKey="Maaref, H" sort="Maaref, H" uniqKey="Maaref H" first="H." last="Maaref">H. Maaref</name><name sortKey="Maaref, H" sort="Maaref, H" uniqKey="Maaref H" first="H." last="Maaref">H. Maaref</name></country><country name="France"><region name="Occitanie (région administrative)"><name sortKey="Marie, X" sort="Marie, X" uniqKey="Marie X" first="X." last="Marie">X. Marie</name></region><name sortKey="Vanelle, E" sort="Vanelle, E" uniqKey="Vanelle E" first="E." last="Vanelle">E. Vanelle</name></country></tree></affiliations></record>Pour manipuler ce document sous Unix (Dilib)
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